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DMN2215UDM
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
? 100m Ω @V GS = 4.5V, I D = 2.5A
? 140m Ω @V GS = 2.5V, I D = 1.5A
? 215m Ω @V GS = 1.8V, I D = 1A
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate to 2kV HBM
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ? Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.015 grams (approximate)
D 1
G 1
SOT-26
S 2
G 2
S 1
D 2
ESD PROTECTED TO 2kV
TOP VIEW
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±12
Units
V
V
Drain Current (Note 1)
Pulsed Drain Current ( Note 4)
T A = 25°C
T A = 85°C
I D
I DM
2.0
1.4
7.0
A
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, or minimum recommended pad layout
Symbol
P D
R θ JA
T J , T STG
Value
650
192
-55 to +150
Units
mW
°C/W
°C
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Pulse width ≤ 10 μ s, duty cycle ≤ 1%.
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
? Diodes Incorporated
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